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H5N5016PL-E0-E Description

H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching.

H5N5016PL-E0-E Key Features

  • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
  • Low leakage current
  • High speed switching
  • Built-in fast recovery diode
  • Quality grade: Standard