H5N5016PL-E0-E Overview
H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching.
H5N5016PL-E0-E Key Features
- Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
- Built-in fast recovery diode
- Quality grade: Standard