Renesas Electronics H7N0308AB
Silicon N-Channel MOSFET
| Part No. | H7N0308AB |
|---|---|
| Datasheet | H7N0308AB Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS (on) = 3.8 mΩ typ.● Low drive current
● 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 6 H7N0308AB
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°CELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gat...
