Renesas Electronics H7N0308LD
Silicon N-Channel MOSFET
FEATURES
R● Low on-resistance DS (on) = 3.8 mΩ typ.
● Low drive current
● 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0308LD H7N0308LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0308LM Rev.5.00 Apr 07, 2006 page 1 of 7 H7N0308LD, H7N0308LS, H7N0308LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 70 280 70 100 1.25 89 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C Pch θ ch-c Note 2 θ ch-a Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc...