Renesas Electronics H7N0310LM
Silicon N-Channel MOSFET
| Part No. | H7N0310LM |
|---|---|
| Datasheet | H7N0310LM Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
R● Low on-resistance DS (on) = 8 mΩ typ.
● Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0310LD H7N0310LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0310LM Rev.5.00 Apr 07, 2006 page 1 of 7 H7N0310LD, H7N0310LS, H7N0310LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 30 120 30 50 2.5 150 –55 to +150 Unit V V A A A W °C/W °C °C Pch θ ch-c Tch Tstg Note 2 2. Value at Tc = 25°CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown v...
