Renesas Electronics H7N0405LD
Silicon N-Channel MOSFET
| Part No. | H7N0405LD |
|---|---|
| Datasheet | H7N0405LD Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 4.0 mΩ typ.● Low drive current.
● Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 2 1. Gate 2. Drain 3. Source 4. Drain 3 H7N0405LD H7N0405LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0405LM Rev.1.00 Sep 25, 2006 page 1 of 7 H7N0405LD, H7N0405LS, H7N0405LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Rating 40 ±20 80 320 80 40 213 80 150 –55 to +150 Unit V V A A A A mJ W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drai...
