Renesas Electronics H7N0602LD
Silicon N-Channel MOSFET
| Part No. | H7N0602LD |
|---|---|
| Datasheet | H7N0602LD Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS (on) = 4.1 mΩ typ.● 4.5 V gate drive devices
● High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0602LD H7N0602LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0602LM Rev.6.00 Oct 16, 2006 page 1 of 8 H7N0602LD, H7N0602LS, H7N0602LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characte...
