Renesas Electronics H7N0603DS
Silicon N-Channel MOSFET
| Part No. | H7N0603DS |
|---|---|
| Datasheet | H7N0603DS Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on - resistance RDS (on) = 11 mΩ typ.● Low drive current
● Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2) D 4 PRSS0004ZD-C (Previous code: DPAK-(S)) 4 G 1 2 3 1. Gate 2. Drain 3. Source 4. Drain H7N0603DS S 1 2 3 H7N0603DL
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Ratings 60 ±20 30 120 30 25 53.6 40 150 –55 to +150 Unit V V A A A A mJ W °C °C Rev.2.00, Jan.26.2005, page 1 of 8 H7N0603DL, H7N0603DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cuto...
