Renesas Electronics H7N0607DL
Silicon N-Channel MOSFET
| Part No. | H7N0607DL |
|---|---|
| Datasheet | H7N0607DL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 26 mΩ typ.● Low drive current.
● Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note3 IAP EAR Note3 PchNote2 Tch Tstg Rating 60 ±20 20 80 20 8 5.48 25 150 –55 to +150 Unit V V A A A A mj W °C °C Rev.3.00, Jan.27.2005, page 1 of 8 H7N0607DL, H7N0607DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to so...
