Renesas Electronics H7N0608L
Silicon N-Channel MOSFET
| Part No. | H7N0608L |
|---|---|
| Datasheet | H7N0608L Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 6.0 mΩ typ.● Low drive current
● Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.2003, page 1 of 11 H7N0608LD, H7N0608LS, H7N0608LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 70 280 70 40 137 80 150 –55 to +150 Unit V V A A A A mJ W °C °C EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Oct.30.2003, page 2 of 11 H7N0608LD, H7N0608LS, H7N0608LMELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ — — — — — 6.0 8.0 75 6200 680 350 100...
