Renesas Electronics H7N1002AB
Silicon N-Channel MOSFET
| Part No. | H7N1002AB |
|---|---|
| Datasheet | H7N1002AB Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 8 mΩ typ.● Low drive current
● Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 H7N1002ABELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 100 Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 25 0.93 70 Max — — ±10 10 2.5 10 15 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V...
