Renesas Electronics H7N1004DL
Silicon N-Channel MOSFET
| Part No. | H7N1004DL |
|---|---|
| Datasheet | H7N1004DL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 25 mΩ typ.● Low drive current
● Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 3 G 1. Gate 2. Drain 3. Source H7N0607DS 1 2 3 S H7N0607DL
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 ±20 25 75 75 15 22.5 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Rev.1.00 Nov 07, 2006 page 1 of 8 H7N1004DL, H7N1004DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current...
