Renesas Electronics H7P0601DS
Silicon P-Channel MOSFET
| Part No. | H7P0601DS |
|---|---|
| Datasheet | H7P0601DS Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 40 mΩ typ.● Low drive current
● 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating –60 ±20 –20 –80 –20 –12 12.3 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EAR Pch Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.05.2003, page 2 of 10 H7P0601DL, H7P0601DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS –60 Typ — — — — — 40 60 12 2200 220 130 37 6.5 8 25...
