Renesas Electronics H7P1002DL
Silicon P-Channel MOSFET
| Part No. | H7P1002DL |
|---|---|
| Datasheet | H7P1002DL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 85 mΩ typ.● Low drive current
● 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain H7P0601DS 1 2 3 S H7P0601DL
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Rating –100 ±20 –15 –60 –15 –12 14.4 30 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 1 of 8 H7P1002DL, H7P1002DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gat...
