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HAF1010RJ - P-Channel MOSFET

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Logic level operation to (.
  • 4 to.
  • 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V and 24 V. Outline.

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Full PDF Text Transcription for HAF1010RJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HAF1010RJ. For precise diagrams, and layout, please refer to the original PDF.

Target Specifications Datasheet HAF1010RJ Silicon P Channel MOS FET Series Power Switching R07DS1361EJ0200 Rev.2.00 Sep 06, 2016 Description This FET has the over tempera...

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EJ0200 Rev.2.00 Sep 06, 2016 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation to (–4 to –6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High

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