Renesas Electronics HAF2012L
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.| Part No. | HAF2012L |
|---|---|
| Datasheet | HAF2012L Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOS FET Series Power Switching |
| Buy | Stock & Price |
DESCRIPTION
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.FEATURES
●●
●
● Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 1 1 2 3 D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9 HAF2012(L), HAF2012(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T...
