Renesas Electronics HAF2026RJ
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.| Part No. | HAF2026RJ |
|---|---|
| Datasheet | HAF2026RJ Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel Power MOSFET Power Switching |
| Buy | Stock & Price |
DESCRIPTION
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..FEATURES
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● Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 (FP-8DAV)) 8 5 7 6 3 1 2 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain D 7 D 8 D 5 D 6 2 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1 S 4 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 3 S Temperature Sensing Circuit Latch Circuit Temperature Sensing Circuit Latch Circuit MOS1 MOS2 Rev.2.00 Jun 02, 2006 page 1 of 8 HAF2026RJ
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 Gate to source voltage...
