Renesas Electronics HAT1035R
Silicon P-Channel Power MOSFET
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | HAT1035R |
|---|---|
| Datasheet | HAT1035R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Capable of –4 V gate drive
● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 78 56 DD DD 8 7 65 2 4 1 234 G G S1 MOS1 S3 MOS2 REJ03G0845-0100 Rev.1.00 Apr.22,2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to Source voltage VDSS –150 Gate to Source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-Drain diode reverse Drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) (Ta = 25°C) Unit V V A A A W W °C °C Rev.1.00 Apr. 22, 2005 page 1 of 3 HAT1035RELECTRICAL CHARACTERISTICS
Item Symbol Drain to Source breakdown volta...
