• Part: HAT1043M
  • Description: Silicon P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 174.66 KB
Download HAT1043M Datasheet PDF
Renesas
HAT1043M
Features - Low on-resistance - Low drive current - High density mounting - 2.5 V gate drive device can be driven from 3 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 Sep 07, 2005 1 256 D DDD S 4 4 3 1, 2, 5, 6 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 6 Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS - 20 VGSS ±12 Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation ID ID (pulse) Note 1 IDR Note 2 Pch (pulse) Note 2 Pch (continuous) Note 3 - 4.4 - 17.6 - 4.4 2.0 1.05 Channel temperature Tch Storage temperature Tstg - 55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta =...