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HAT1043M
Silicon P Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
4
5
6
3
3
G
2
1
REJ03G1151-0600 (Previous: ADE-208-754D)
Rev.6.00 Sep 07, 2005
1 256 D DDD
S 4
4 3 1, 2, 5, 6
Source Gate Drain
Rev.6.00 Sep 07, 2005 page 1 of 6
HAT1043M
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
–20
VGSS
±12
Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation
ID ID (pulse) Note 1
IDR Note 2 Pch (pulse) Note 2 Pch (continuous) Note 3
–4.4 –17.6 –4.4
2.0 1.
HAT1043M Datasheet
