Renesas Electronics HAT1065R
Silicon P-Channel Power MOSFET
| Part No. | HAT1065R |
|---|---|
| Datasheet | HAT1065R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Capable of –4 V gate drive
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 7 65 2 G 1 234 78 DD 4 G S1 MOS1 56 DD S3 MOS2 REJ03G0579-0200 Rev.2.00 Apr 04, 2006 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-drain diode reverse drain current Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1.3 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Rev.2.00 Apr 04, 2006 page 1 of 3 HAT1065RELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source breakdo...
