Renesas Electronics HAT1069C
Silicon P-Channel Power MOSFET
| Part No. | HAT1069C |
|---|---|
| Datasheet | HAT1069C Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V)● High speed switching
● Capable of 1.8 V gate drive
● High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 6 5 2 3 4 5 D D D D 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 2 1 3 S 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tch Tstg Ratings –12 ±8 –4 –16 –4 900 150 –55 to +150 Unit V V A A A mW °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the grass epoxy board. (FR4 40 × 40 × 1.6 mm) REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 1 of 5 HAT1069CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to sour...
