Renesas Electronics HAT1095C
Silicon P-Channel Power MOSFET
| Part No. | HAT1095C |
|---|---|
| Datasheet | HAT1095C Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V)● Low drive current.
● 1.8 V gate drive devices.
● High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 5 4 6 3 2 1 Data Sheet R07DS1174EJ0600 (Previous: REJ03G1232-0500) Rev.6.00 Mar 19, 2014 2 34 5 D DD D 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to Source voltage VDSS –12 Gate to Source voltage VGSS ±8 Drain current Drain peak current ID –2 ID(pulse)Note1 –8 Body - Drain diode reverse drain current IDR –2 Channel dissipation PchNote 2 830 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C (Ta = 25°C) Unit V V A A A mW °C °C R07DS1174EJ0600 Rev.6.00 Mar 19, 2014 Page 1 of 6 HAT1095CELECTRICAL CHARACTERISTICS
Item Drain to Source breakdown voltage Gate to Source breakdown voltage...
