HAT1108C Datasheet PDF

FEATURES

● Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V)
● Low drive current.
● 4.5 V gate drive devices.
● High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Symbol Ratings Drain to Source voltage VDSS –30 Gate to Source voltage VGSS –20 / +10 Drain current ID –1.5 Note1 Drain peak current ID (pulse) –6 Body - Drain diode reverse drain current IDR –1.5 Channel dissipation PchNote 2 830 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C Unit V V A A A mW °C °C Rev.5.00, Aug 30, 2006 page 1 of 6 HAT1108C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate...