Renesas Electronics HAT1110R
Silicon P-Channel Power MOSFET
| Part No. | HAT1110R |
|---|---|
| Datasheet | HAT1110R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Capable of –4.5 V gate drive● Low drive current
● High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to source voltage VDSS –80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID –1 ID(pulse)Note1 –6 Reverse drain current Channel dissipation Channel dissipation IDR –1 Pch Note2 1.2 Pch Note3 1.8 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Rev.2.00, Oct.07.2004, page 1 of 7 HAT1110RELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain...
