HAT1111C Datasheet PDF

FEATURES

● Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V)
● Low drive current.
● 4.5 V gate drive devices.
● High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Ratings –60 –20 / +10 –2 –8 –2 1.25 Unit V V A A A W °C °C Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s, Ta = 25°C Rev.6.00 May 19, 2005 page 1 of 6 HAT1111C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage curren...