Full PDF Text Transcription for HAT2029R (Reference)
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HAT2029R. For precise diagrams, tables, and layout, please refer to the original PDF.
HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High densit...
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apable of 2.5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1164-0600 (Previous: ADE-208-525D) Rev.6.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 7 HAT2029R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 28 VGSS ±12 Drain current Drain peak current ID 7.5 ID (pulse) Note 1 60 Body-drain diode reverse drain current IDR 7.
HAT2029R Datasheet
