Renesas Electronics HAT2080R
Silicon N-Channel Power MOSFET
HAT2080R Specifications
- Package : SOP
- Mount Type : Surface Mount
- Drain-Source Resistance : 850mΩ
- Min Breakdown Voltage : 250V
- Terminals : 8
- Rise Time : 10ns
- Fall Time : 15ns
- Max Power Dissipation : 2.5W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | HAT2080R |
|---|---|
| Datasheet | HAT2080R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1180-0200 (Previous: ADE-208-1229) Rev.2.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.2.00 Sep 07, 2005 page 1 of 3 HAT2080R
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage Gate to source voltage VDSS 250 VGSS ±30 Drain current Drain peak current ID ID (pulse) Note 1 1.7 13.6 Body to drain diode reverse drain current IDR 1.7 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage S...
