Renesas Electronics HAT2087R
Silicon N-Channel MOSFET
| Part No. | HAT2087R |
|---|---|
| Datasheet | HAT2087R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 87 65 1234 4 G 5678 DDDD SSS 123 REJ03G1182-0300 Rev.3.00 Feb 06, 2009 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage VDSS 250 Gate to source voltage VGSS ±30 Drain current Drain peak current ID ID (pulse) Note 1 2.5 20 Body to drain diode reverse drain current Channel dissipation IDR Pch Note 2 2.5 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C REJ03G1182-0300 Feb 06, 2009 Page 1 of 6 HAT2087RELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current V (BR) DSS 250 — — IGSS — — ±0.1 Zero gate voltage drain current IDSS —— 1 Gate to...
