Renesas Electronics HAT2089R
Silicon N-Channel Power MOSFET
| Part No. | HAT2089R |
|---|---|
| Datasheet | HAT2089R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1184-0200 (Previous: ADE-208-1235) Rev.2.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.2.00 Sep 07, 2005 page 1 of 3 HAT2089R
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage Gate to source voltage VDSS 250 VGSS ±30 Drain current Drain peak current ID 2 ID (pulse) Note 1 16 Body to drain diode reverse drain current IDR 2 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer...
