Renesas Electronics HAT2093R
Silicon N-Channel Power MOSFET
| Part No. | HAT2093R |
|---|---|
| Datasheet | HAT2093R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Capable of 4.5 V gate drive
● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1185-0300 (Previous: ADE-208-1237A) Rev.3.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.3.00 Sep 07, 2005 page 1 of 3 HAT2093R
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 9 ID (pulse) Note 1 72 Body-drain diode reverse drain current IDR 9 Channel dissipation Pch Note 2 2 Channel dissipation Pch Note 3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °CELECTRICAL CHARACTERISTICS
Item D...
