Renesas Electronics HAT2105T
Silicon N-Channel MOSFET
| Part No. | HAT2105T |
|---|---|
| Datasheet | HAT2105T Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Capable of 4 V gate drive
● High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> ) 87 6 5 123 4 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 REJ03G0384-0200 Rev.2.00 Aug 06, 2007 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to source voltage VDSS 200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID 0.5 ID (pulse)Note1 2 Body-drain diode reverse drain current IDR 0.5 Channel dissipation PchNote 2 1 PchNote 3 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C REJ03G0384-0200 Rev.2.00 Aug 06, 2007 Page 1 of 3 HAT2105TELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to so...
