Renesas Electronics HAT2139H
Silicon N-Channel Power MOSFET
| Part No. | HAT2139H |
|---|---|
| Datasheet | HAT2139H Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Capable of 7 V gate drive● Low drive current
● High density mounting
● Low on-resistance RDS(on) = 9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0055-0500 Rev.5.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg Ratings 40 ±20 20 80 20 10 8 15 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Rev.5.00 Sep 20, 2005 page 1 of 7 HAT2139HELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I...
