Renesas Electronics HAT2168H
Silicon N-Channel MOSFET
| Part No. | HAT2168H |
|---|---|
| Datasheet | HAT2168H Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High speed switching● Capable of 4.5 V gate drive
● Low drive current
● High density mounting
● Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0046-0700 Rev.7.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 30 ±20 30 120 30 15 22 15 8.33 150 – 55 to + 150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.7.00 Sep 20, 2005 page 1 of 7 HAT2168HELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DS...
