Renesas Electronics HAT2170H
Silicon N-Channel MOSFET
| Part No. | HAT2170H |
|---|---|
| Datasheet | HAT2170H Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High speed switching● Capable of 7 V gate drive
● Low drive current
● High density mounting
● Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 4 G
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAPNote2 EARNote2 PchNote3 θch-C Tch Tstg REJ03G0121-0500 Rev.5.00 Sep 26, 2005 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Ratings 40 ±20 45 180 45 30 72 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.5.00, Sep 26, 2005, page 1 of 7 HAT2170HELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40...
