Renesas Electronics HAT2174H
Silicon N-Channel MOSFET
| Part No. | HAT2174H |
|---|---|
| Datasheet | HAT2174H Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Capable of 8 V gate drive● Low drive current
● High density mounting
● Low on-resistance RDS(on) = 21 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0041-0400 Rev.4.00 Dec 11, 2006 1, 2, 3 Source 4 Gate 5 Drain
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.4.00 Dec 11, 2006 page 1 of 7 HAT2174HELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source break...
