Renesas Electronics HAT2179R
Silicon N-Channel MOSFET
| Part No. | HAT2179R |
|---|---|
| Datasheet | HAT2179R Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1570-0200 Rev.2.00 Jul 17, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Drain to source voltage Gate to source voltage VDSS 600 VGSS ±30 Drain current Drain peak current ID 0.7 ID Note1 (pulse) 2.0 Body-drain diode reverse drain current IDR 0.7 Body-drain diode reverse drain peak current IDR Note1 (pulse) 2.0 Channel dissipation Pch Note2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A A W °C °C REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 1 of 6 HAT2179RELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0...
