Renesas Electronics HAT2184WP
Silicon N-Channel MOSFET
| Part No. | HAT2184WP |
|---|---|
| Datasheet | HAT2184WP Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G REJ03G0536-0500 Rev.5.00 Nov 27, 2006 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 14 28 14 28 14 14.7 25 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.5.00 Nov 27 2006 page 1 of 6 HAT2184WPELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 15...
