Renesas Electronics HAT2188WP
Silicon N-Channel Power MOSFET
| Part No. | HAT2188WP |
|---|---|
| Datasheet | HAT2188WP Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 D DDD 4 G S SS 1 23 5 678 4 32 1 REJ03G0534-0500 Rev.5.00 Mar.24.2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
ABSOLUTE MAXIMUM RATINGS
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 12 24 12 24 12 9.6 25 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.5.00, Mar.24.2005, page 1 of 3 HAT2188WPELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to Source breakdown voltage V(BR)DSS 20...
