Renesas Electronics HAT2189WP
Silicon N-Channel Power MOSFET
| Part No. | HAT2189WP |
|---|---|
| Datasheet | HAT2189WP Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G1251-0200 Rev.2.00 Aug 28, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 8.5 17 8.5 17 8.5 4.8 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 1 of 6 HAT2189WPELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdo...
