HAT2196C Datasheet PDF

FEATURES

● Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V)
● Low drive current.
● High density mounting
● 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 20 ±12 2.5 10 2.5 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.5.00, Jun. 13, 2005, page 1 of 6 HAT2196C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff vol...