Renesas Electronics HAT2200WP
Silicon N-Channel Power MOSFET
| Part No. | HAT2200WP |
|---|---|
| Datasheet | HAT2200WP Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Capable of 8 V gate drive● Low drive current
● High density mounting
● Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25°C, Rg 50 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3●ch-c Note3 Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1678-0311 Rev.3.11 Nov. 25, 2016 Page 1 of 7 HAT2200WP
ELECTRICAL CHARACTERISTICS
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