Renesas Electronics HAT2281C
Silicon N-Channel Power MOSFET
| Part No. | HAT2281C |
|---|---|
| Datasheet | HAT2281C Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V)● Low drive current
● High density mounting
● 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) Ratings 60 ±12 2 8 2 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.2.00 Jan 26, 2006 page 1 of 6 HAT2281CELECTRICAL CHARACTERISTICS
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on stat...
