HIP2060 Description
The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications...
HIP2060 Key Features
- Two 10A Power MOS N-Channel Transistors
- Output Voltage to 60V
- rDS(ON)
- 0.135 Max Per Transistor at VGS = 15V
- rDS(ON)
- 0.15 Max Per Transistor at VGS = 10V
- Pulsed Current
- 25A Each Transistor
- Avalanche Energy
- 100mJ Each Transistor