Renesas Electronics HIT667
Silicon NPN Epitaxial
| Part No. | HIT667 |
|---|---|
| Datasheet | HIT667 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Epitaxial |
| Buy | Stock & Price |
FEATURES
● Low frequency power amplifier● Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings 120 100 6 1.0 2.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT667ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min 120 100 6 —...
