Renesas Electronics HITK0203MP
Silicon N Channel MOS FET Power Switching
| Part No. | HITK0203MP |
|---|---|
| Datasheet | HITK0203MP Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOS FET Power Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A)● Low drive current
● High speed switching
● 2.5 V gate drive R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G 1. Source 2. Gate 3. Drain S 1 Note: Marking is “SG”.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 20 12 2.9 10 2.9 0.8 150 –55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Page 1 of 6 Free Datasheet HITK0203MP PreliminaryELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source le...
