• Part: HSC119
  • Description: Silicon Epitaxial Planar Diode
  • Category: Diode
  • Manufacturer: Renesas
  • Size: 154.95 KB
Download HSC119 Datasheet PDF
Renesas
HSC119
Features - Low capacitance. (C = 2.0 p F max) - Short reverse recovery time. (trr = 3.0 ns max) - Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC119 Laser Mark H1 Package Code UFP Pin Arrangement Cathode mark Mark 1 H1 2 1. Cathode 2. Anode Rev.1.00, Mar.22.2004, page 1 of 4 Absolute Maximum Ratings Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Within 1µs forward surge current. Symbol VRM VR IFM IFSM - 1 IO Tj Tstg Value 85 80 300 4 100 125 - 55 to +125 (Ta = 25°C) Unit V V m A A m A °C °C Electrical Characteristics Item Symbol Min Typ Forward voltage VF1 - - VF2 - - Reverse current - - Capacitance - - Reverse recovery time- 1 trr - - Note: 1. Reverse recovery time test circuit (Ta =...