Renesas Electronics HSC119
Silicon Epitaxial Planar Diode
| Part No. | HSC119 |
|---|---|
| Datasheet | HSC119 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Epitaxial Planar Diode |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C = 2.0 pF max)● Short reverse recovery time. (trr = 3.0 ns max)
● Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC119 Laser Mark H1 Package Code UFP Pin Arrangement Cathode mark Mark 1 H1 2 1. Cathode 2. Anode Rev.1.00, Mar.22.2004, page 1 of 4 HSC119
ABSOLUTE MAXIMUM RATINGS
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Within 1µs forward surge current. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 85 80 300 4 100 125 –55 to +125 (Ta = 25°C) Unit V V mA A mA °C °CELECTRICAL CHARACTERISTICS
Item Symbol Min Typ Forward voltage VF1 — — VF2 — — Reverse current IR — — Capacitance C — — Reverse recovery time*1 trr — — Note: 1. Reverse recovery time test circuit (Ta = 25°C) Max Unit Test Condition 0.8 V IF = 10 mA 1.2 IF = 100 mA 0.1 µA VR = 80 V 2.0 pF VR = 0 V, f = 1 MHz 3.0...
