Renesas Electronics HSM226S
Silicon Schottky Barrier Diode
| Part No. | HSM226S |
|---|---|
| Datasheet | HSM226S Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Low reverse current, Low capacitance.● MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM226S Laser Mark S22 Package Code MPAK Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Jan.21.2004, page 1 of 4 HSM226S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Symbol VRRM Value 25 1 2 Unit V mA mA °C °C IFSM * * IF * Tj Tstg 2 200 50 125 −55 to +125ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Note: Per one device IR C Min Typ Max 0.33 0.38 0.45 2.80 µA pF Unit V Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz Rev.1.00, Jan.21.2004, page 2 of 4 HSM226S Main Characteristic 101 100 Reverse current IR (A) 10–4 P...
