Renesas Electronics HVC132
Silicon Epitaxial Planar Pin Diode for Antenna Switching
| Part No. | HVC132 |
|---|---|
| Datasheet | HVC132 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Epitaxial Planar Pin Diode for Antenna Switching |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C = 0.5 pF max)● Low forward resistance. (rf = 2.0 Ω max)
● Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC132 Pin Arrangement Laser Mark P2 Cathode mark Mark 1 P2 2 1. Cathode 2. Anode Package Code UFP Rev.3.00 Oct 29, 2004 page 1 of 4 HVC132
ABSOLUTE MAXIMUM RATINGS
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VRM VR IF Pd Tj Tstg Symbol Value 65 60 100 150 125 −55 to +125 (Ta = 25°C) Unit V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR Forward voltage VF Capacitance C Forward resistance rf — — 0.1 µA VR = 60 V — — 1.0 V IF = 10 mA — — 0.8 pF VR = 1 V, f = 1 MHz — — 1.0 Ω IF = 10 mA, f = 100 MHz Rev.3.00 Oct 29, 2004 page 2 of 4 HVC132 Main Characteristic 10-2 10-4 Forward current IF (A) 10-6 10-8 10-10 Ta = 75°C Ta = 25°C Ta = -25°C 10-12 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs.
