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ISL81807 - 80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET

General Description

3.

10 3.1 Absolute Maximum Rat

Key Features

  • programmable soft-start and accurate threshold enable functions along with a power-good indicator to simplify power supply rail sequencing. It also provides full protection features such as OVP, UVP, OTP, and average and peak current limit on both outputs to ensure high reliability. The IC is packaged in a space conscious 32 Ld 5mm×5mm TQFN. The package uses an EPAD to improve thermal performance and noise immunity. The full feature design with low pin count makes the ISL81807 an ideal solution.

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Datasheet Details

Part number ISL81807
Manufacturer Renesas
File Size 0.97 MB
Description 80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET
Datasheet download datasheet ISL81807 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL81807 80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET Datasheet The ISL81807 is a dual synchronous boost controller that generates two independent outputs or one output with two interleaved phases for a wide variety of applications in industrial and general-purpose segments. With a wide input and output voltage ranges, the controller is suitable for telecommunication, data center, and computing applications. The ISL81807 provides a gate driver voltage of 5.3V. With its small dead time setting, it is a perfect controller for the E-mode GaN FET devices. The ISL81807 uses peak current mode control with phase interleaving for the two outputs.