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K1404. For precise diagrams, and layout, please refer to the original PDF.
2SK1404 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown ...
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e • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline REJ03G0944-0300 Rev.3.00 May 15, 2006 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.3.00 May 15, 2006 page 1 of 6 2SK1404 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤1% 2.