Datasheet4U Logo Datasheet4U.com

K2138 - N-Channel Power MOSFET

Datasheet Summary

Description

Transistor designed for high voltage switching applications.

Features

  • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 550 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Datasheet preview – K2138

Datasheet Details

Part number K2138
Manufacturer Renesas
File Size 158.05 KB
Description N-Channel Power MOSFET
Datasheet download datasheet K2138 Datasheet
Additional preview pages of the K2138 datasheet.

📁 Similar Datasheet

  • K2131 - 2SK2131 (NEC)
  • K2132 - 2SK2132 (NEC)
  • K2134 - 2SK2134 (NEC)
  • K2135 - 2SK2135 (NEC)
  • K2136 - 2SK2136 (NEC)
  • K2137 - 2SK2137 (NEC)
  • K2139 - MOS Field Effect Transistor (NEC)
  • K210 - Silicon Zener Diodes (Aeroflex)
  • K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Semiconductor)
  • K210 - LOW LEVEL ZENER DIODES (Knox Inc)
Other Datasheets by Renesas

    Full PDF Text Transcription

    Click to expand full text
    DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.
    Published: |